fig8

Figure 8. (A) Schematic representation of Si-Cu₃Si-CNT/G-C synthesis. (B) Cycling behavior of graphite, bulk Si and Si-Cu₃SiCNT/G-C. (C) Rate capabilities of graphite and Si-Cu₃Si-CNT/G-C. (D) ICE and capacity retention for bulk Si, Si-Cu₃Si, Si-Cu₃Si-CNT/G and Si-Cu₃Si-CNT/G-C electrodes. (E) Voltage profiles from 1st to 100th cycle for Si-Cu₃Si-CNT/G-C. (F) Changes to the thickness of bulk Si, Si-Cu₃Si, Si-Cu₃Si-CNT/G and Si-Cu₃Si-CNT/G-C electrodes according to the SOC. Reproduced with permission from Ref.^[143] (Copyright 2020, Chemical Engineering, Elsevier). CNT: Carbon nanotube; HEBM: heat treatment and ball milling; SOC: state of charge.