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Figure 5. Device configuration and performance of silicon solar cells and four-terminal tandem solar cells. (A) Device configuration of a four-terminal tandem solar cell stacked by a top PSC and a bottom silicon solar cell. (B) J-V plots of monocrystalline silicon solar cells, where the insets are the cross-sectional structure and corresponding photovoltaic parameter values. (C) Near-infrared transmittance and (D) average transmittance and internal resistance of PSCs with different thicknesses of Au counter electrodes. (E) J-V plots of top PSC with n = 40 and bottom silicon solar cell. (F) Box diagrams of V_OC, J_SC, FF and PCE distributions of 48 PSCs with different n values based on 20 nm-thick Au counter electrodes.