fig3

Figure 3. (A) Schematic of the preparation process for Sn@3D-K. This figure is quoted with permission from Ye et al.^[68]. (B) The fabrication process of K wetting on active carbon cloth, DFT calculation of K growth on treated and untreated carbon surfaces, and the greatly improved wettability of the K metal on the functionalized carbon host. This figure is quoted with permission from Meng et al.^[69]. (C) The synthesis of the SA-Co@HC; cycle stability of the symmetric cells at 0.5 mA cm^-2 with a fixed areal capacity of 0.5 mAh cm^-2; cycling and rate performance of full cells with SA-C@HC/K and bare K anode and a PTCDA cathode at different current densities. This figure is quoted with permission from Zhang et al.^[70].