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  • Prof. Yuhui Chen

    School of Energy Science and Engineering, Nanjing Tech University, Nanjing, Jiangsu, China.


  • Prof. Bingqing Wei

    Department of Mechanical Engineering, University of Delaware, USA.

    Professor Bingqing Wei received his Bachelor’s degree (1987), M.S. (1989), and Ph.D. (1992) in Mechanical Engineering from Tsinghua University, Beijing, China. He is a Professor in the Department of Mechanical Engineering and serves as Director of the Center for Fuel Cells and Batteries at the University of Delaware, USA. He is the inaugural Field-Chief-Editor of Frontiers in Nanotechnology. Dr. Wei was an Assistant Professor in the Department of Electrical & Computer Engineering and Center for Computation & Technology at Louisiana State University from 2003 to 2007. He was a Research Scientist at Rensselaer Polytechnic Institute, Department of Materials Science and Engineering, and Rensselaer Nanotechnology Center from 2000 to 2003. Dr. Wei was a visiting scientist at Max-Planck-Institut für Metallforschung, Stuttgart, Germany, in 1998 and 1999. From 1993 to 2001, he was a faculty member at Tsinghua University in Beijing. Dr. Wei’s research interest and expertise lie in nanomaterials and nanotechnology. His research interests have focused on carbon nanostructure synthesis, processing, characterization, physical properties, and their applications in energy conversion and storage devices.

    Topic: Super-semiconductor: An Intriguing Conducting Material with Energy-saving Potential

    Abstract: Solid state materials can be categorized as conductors, semiconductors, and insulators based on their electrical conductivity. Breakthrough discoveries, such as superconductors (FeSe, YBCO, etc.) and topological insulators (HgTe, Bi2Te3, etc.), have led to the limit of conductivity falling by orders of magnitude or even to zero when certain extreme conditions are met. In this presentation, I will discuss a new set of semiconductors, i.e., super-semiconductors, which resistivity of ~10-8Ω*m at room temperature is low enough to provide a basis for ultra-low-power electronic devices. PN junction diodes based on the super-semiconductors show unique properties compared to the pn junction diodes built upon traditional semiconductors, such as a near zero-threshold voltage of the pn junction diodes and a high breakdown field of ~ 1.1×106 V/cm. The super-semiconductor pn junction diodes are anticipated to apply to ultra-low-power electronic devices.

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