fig1

Figure 1. Characteristics of electrical doping. (A) Schematic of conductivity type conversions in perovskite films by self-doping. Reproduced from Wang et al.^[19]. (B) Formation energies of intrinsic point defects in MAPbI₃, where the vertical dotted lines indicate Fermi level pinning and the Fermi levels are referenced to the valence band maximum. Reproduced from Yin et al.^[23]. (C) Calculated formations energies of defects formed by group IA and IB elements as a function of the Fermi level under I-rich/Pb-poor and I-poor/Pb-rich conditions. (D) Calculated total density of states (DOS) and partial DOS for O_I, S_I, Se_I, and Te_I acceptors. Reproduced from Shi et al.^[24]. (E) Calculated partial DOS for MAPbI₃ and MASb_0.25Pb_0.75I₃. (F) Electron density of Sb-doped perovskite film by Hall effect measurements. Reproduced from Zhang et al.^[27].